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| v03.1203 MICROWAVE CORPORATION HMC413QS16G GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Features Gain: 23 dB Saturated Power: +29.5 dBm 42% PAE Supply Voltage: +2.75V to +5.0 V Power Down Capability Low External Part Count 8 AMPLIFIERS - SMT Typical Applications This amplifier is ideal for use as a power/driver amplifier for 1.6 - 2.2 GHz applications: * Cellular / PCS / 3G * Portable & Infrastructure * Wireless Local Loop Functional Diagram General Description The HMC413QS16G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5.0V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control. Electrical Specifications, TA = +25 C, As a Function of Vs, Vpd = 3.6V Vs= 3.6V Parameter Frequency Min. 1.6 - 1.7 GHz 1.7 - 2.0 GHz 2.0 - 2.1 GHz 2.1 - 2.2 GHz 1.6 - 2.2 GHz 1.6 - 2.2 GHz 1.6 - 2.2 GHz 1.6 - 1.7 GHz 1.7 - 2.2 GHz 1.6 - 1.7 GHz 1.7 - 2.2 GHz 1.6 - 1.7 GHz 1.7 - 2.0 GHz 2.0 - 2.2 GHz 1.6 - 2.2 GHz Vpd= 0V/3.6V Vpd= 3.6V tON, tOFF 32 33 32 20 21 18 19 18 17 Typ. 21 22 21 20 0.025 10 8 23 24 25.5 26.5 35 36 35 5.5 0.002/220 7 80 36 37 36 23 24 0.035 Max. Min. 19 20 19 18 Typ. 22 23 22 21 0.025 10 9 26 27 28.5 29.5 39 40 39 5.5 0.002/270 7 80 0.035 Max. dB dB dB dB dB/C dB dB dBm dBm dBm dBm dBm dBm dBm dB mA mA ns Vs= 5.0V Units Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed 8 - 166 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v03.1203 MICROWAVE CORPORATION HMC413QS16G GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Gain vs. Temperature, Vs= 3.6V 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Gain vs. Temperature, Vs= 5.0V 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 1.3 1.4 1.5 1.6 1.7 1.8 1.9 8 AMPLIFIERS - SMT 8 - 167 GAIN (dB) +25 C +85 C -40 C GAIN (dB) +25 C +85 C -40 C 2 2.1 2.2 2.3 2.4 2.5 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) Return Loss, Vs= 3.6V 0 -2 -4 Return Loss, Vs= 5.0V 0 -2 -4 RETURN LOSS (dB) -6 -8 -10 -12 -14 -16 -18 -20 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 S11 S22 RETURN LOSS (dB) -6 -8 -10 -12 -14 -16 -18 -20 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 S11 S22 2.1 2.2 2.3 2.4 2.5 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature, Vs= 3.6V 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 1.3 1.4 1.5 1.6 1.7 1.8 1.9 P1dB vs. Temperature, Vs= 5.0V 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 1.3 1.4 1.5 1.6 1.7 1.8 1.9 P1dB (dBm) +25 C +85 C -40 C P1dB (dBm) +25 C +85 C -40 C 2 2.1 2.2 2.3 2.4 2.5 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v03.1203 HMC413QS16G GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz 8 AMPLIFIERS - SMT Psat vs. Temperature, Vs= 3.6V 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Psat vs. Temperature, Vs= 5.0V 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Psat (dBm) +25 C +85 C -40 C Psat (dBm) +25 C +85 C -40 C 2 2.1 2.2 2.3 2.4 2.5 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) Power Compression@ 1.9 GHz, Vs= 3.6V 46 Power Compression@ 1.9 GHz, Vs= 5.0V 46 Pout (dBm), GAIN (dB), PAE (%) 38 34 30 26 22 18 14 10 6 2 -12 -10 -8 Pout (dBm), GAIN (dB), PAE (%) 42 Pout (dBm) Gain (dB) PAE (%) 42 38 34 30 26 22 18 14 10 6 Pout (dBm) Gain (dB) PAE (%) -6 -4 -2 0 2 4 6 8 10 2 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature, Vs= 3.6V 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Output IP3 vs. Temperature, Vs= 5.0V 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 1.3 1.4 1.5 1.6 1.7 1.8 1.9 OIP3 (dBm) +25 C +85 C -40 C OIP3 (dBm) +25 C +85 C -40 C 2 2.1 2.2 2.3 2.4 2.5 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) 8 - 168 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v03.1203 HMC413QS16G GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Reverse Isolation vs. Temperature, Vs= 3.6V 0 -10 +25 C +85 C -40 C Power Down Isolation, Vs= 3.6V 0 -10 8 AMPLIFIERS - SMT Icq (mA) ISOLATION (dB) ISOLATION (dB) -20 -30 -40 -50 -60 -70 1.3 1.4 1.5 1.6 1.7 1.8 1.9 -20 -30 -40 -50 -60 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) Noise Figure vs. Temperature, Vs= 3.6V 10 9 8 Noise Figure vs. Temperature, Vs= 5.0V 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 1.5 1.6 1.7 +25 C +85 C -40 C NOISE FIGURE (dB) 7 6 5 4 3 2 1 +25 C +85 C -40 C 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 0 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 1.9 GHz 30 29 28 27 Gain Gain, Power & Quiescent Supply Current vs. Vpd @ 1.9 GHz, Vcc = +3.6V 32 30 28 26 24 22 20 P1dB Psat 26 25 24 23 22 21 20 2.75 3.25 3.75 4.25 4.75 GAIN (dB), P1dB (dBm), Psat (dBm) 34 18 16 14 5.25 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 1.5 Gain P1dB Psat Icq 330 310 290 270 250 230 210 190 170 150 130 110 90 70 50 30 3.5 P1dB, Psat (dBm) GAIN (dB) 1.75 2 2.25 2.5 2.75 3 3.25 Vcc SUPPLY VOLTAGE (Vdc) Vpd (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 169 MICROWAVE CORPORATION v03.1203 HMC413QS16G GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz 8 AMPLIFIERS - SMT Absolute Maximum Ratings Collector Bias Voltage (Vcc) Control Voltage (Vpd1, Vpd2) RF Input Power (RFin)(Vs = +5.0 Vdc, Vpd = +3.6 Vdc) Junction Temperature Continuous Pdiss (T = 85 C) (derate 24 mW/C above 85 C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +5.5 Vdc +4.0 Vdc +20 dBm 150 C 1.56 W 42 C/W -65 to +150 C -40 to +85 C Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 8 - 170 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v03.1203 HMC413QS16G GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Pin Descriptions Pin Number Function Description Interface Schematic 8 AMPLIFIERS - SMT 8 - 171 1, 2, 4, 5, 7, 8, 9, 10, 13, 15 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 3, 14 Vpd1, Vpd2 Power Control Pin. For maximum power, this pin should be connected to 3.6V. For 5V operation, a dropping resistor is required. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 6 RF IN This pin is AC coupled and matched to 50 Ohms from 1.6 to 2.2 GHz. 11, 12 RF OUT RF output and bias for the output stage. 16 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v03.1203 HMC413QS16G GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz 8 AMPLIFIERS - SMT Evaluation PCB * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 3 and 14. List of Material Item J1 - J2 J3 C1 C2 C3 - C4 C5 L1 U1 PCB* Description PC Mount SMA RF Connector 2 mm DC Header 2.2 pF Capacitor, 0603 Pkg. 10 pF Capacitor, 0402 Pkg. 330 pF Capacitor, 0603 Pkg. 2.2 F Capacitor, Tantalum 16 nH Inductor 0603 Pkg. HMC413QS16G Amplifier 105018 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350 8 - 172 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v03.1203 HMC413QS16G GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Application Circuit 8 AMPLIFIERS - SMT TL1 Impedance Length 50 Ohm 0.1" TL2 50 Ohm 0.15" TL3 50 Ohm 0.1" * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 3 and 14. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 173 |
Price & Availability of HMC413QS16G
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